ePix?是一款基于Timepix3芯片的混合像素探測(cè)器,用于電子顯微鏡,可實(shí)現(xiàn)實(shí)時(shí)直接電子探測(cè)。
ePix?使用數(shù)據(jù)驅(qū)動(dòng)的讀出模式,每個(gè)電子都被分配一個(gè)包含精確位置和能量信息的時(shí)間戳。
與間接電子探測(cè)相比,ePix?的動(dòng)態(tài)范圍幾乎不受限制,在低能段的靈敏度提高了幾個(gè)數(shù)量級(jí)。
ePix?將高性能讀出架構(gòu)與創(chuàng)新、堅(jiān)固的探測(cè)器設(shè)計(jì)相結(jié)合,為高通量,高分辨率和高靈敏度電子顯微鏡應(yīng)用提供了非常合適的探測(cè)器解決方案。
特點(diǎn)優(yōu)勢(shì)
? 單電子靈敏度
? 小面積,大立體角
? 高空間分辨率
? 超高速讀出
? 能量閾值
參數(shù)規(guī)格
CMOS technology | 130 nm |
Pixel size | 55 × 55 μm |
Pixel matrix | 256 × 256 |
Sensitive area | 14 × 14 mm |
Sensor material / types | Si / 100, 300, 500 μm |
TOA resolution | 1.56 ns |
Hit rate in Data-driven mode | 64 Mhit/s |
Energy range | 2.5—300 keV |
Readout | USB-C |
Typical power consumption | 3.5 W |
Readout modes | Data-driven zero-suppressed Frame based zero-suppressed |
Pixel mode of operation | simultaneous Time-Over-Threshold and Time-Of-Arrival or integral Time-Over-Threshold and event count |
Extended front-end | 69 mm × 28 mm × 16 mm |
dimensions |
|
Read out dimensions | 104 mm × 67 mm × 30 mm |
Detector mounting | Customizable |
External synchronization | LVDS signals? Trigger In, Trigger Out, Clock In, Clock Out, Ready In, Ready Out |
Front-end to Readout distance | up to 45 cm |
Temperature stabilized | Peltier cooled |
典型應(yīng)用
? (4D) STEM in SEM/TEM
? μED (micro electron diffraction)
? EBSD
? EELS
? Micro/nano CT
? Ptychography
CMOS technology | 130 nm |
Pixel size | 55 × 55 μm |
Pixel matrix | 256 × 256 |
Sensitive area | 14 × 14 mm |
Sensor material / types | Si / 100, 300, 500 μm |
TOA resolution | 1.56 ns |
Hit rate in Data-driven mode | 64 Mhit/s |
Energy range | 2.5—300 keV |
Readout | USB-C |
Typical power consumption | 3.5 W |
Readout modes | Data-driven zero-suppressed Frame based zero-suppressed |
Pixel mode of operation | simultaneous Time-Over-Threshold and Time-Of-Arrival or integral Time-Over-Threshold and event count |
Extended front-end | 69 mm × 28 mm × 16 mm |
dimensions |
|
Read out dimensions | 104 mm × 67 mm × 30 mm |
Detector mounting | Customizable |
External synchronization | LVDS signals? Trigger In, Trigger Out, Clock In, Clock Out, Ready In, Ready Out |
Front-end to Readout distance | up to 45 cm |
Temperature stabilized | Peltier cooled |
? (4D) STEM in SEM/TEM
? μED (micro electron diffraction)
? EBSD
? EELS
? Micro/nano CT
? Ptychography

The diffraction pattern measured for
Si sample aligned to [100] zone axis.